N.F. Zikrillaev, Kh.M. Iliev, G.A. KushievThis email address is being protected from spambots. You need JavaScript enabled to view it., S.B. Isamov, S.V. Koveshnikov, B.A. Abdurakhmanov, and B.O. Isakov
Tashkent State Technical University named after Islam Karimov, Uzbekistan, 100095, Tashkent, Universitetskaya st.2
Received: February 3, 2025 Accepted: June 2, 2025 Publication Date: July 11, 2025
Copyright The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are cited.
The paper presents the results of studying GexSi1−x structures obtained using low-temperature diffusion technology. The presence of clusters and their composition in the silicon lattice is determined by electron microscopy and X-ray spectroscopy. The results showed that germanium atoms in the lattice are collected in the form of round islands containing Si−64.46%, Ge−26.9%. Between the silicon crystal and the islands there are GexSi1−x structures that can affect the photoelectric properties of silicon. It is of interest to study the parameters of solar cells in the presence of such structures. Solar cells containing GexSi1−x structures with a p-n junction depth of 6÷8µ m on the surface of p-type silicon with 0.5Ω· m were obtained. The concentration of GexSi1−x structures was N ≈ 5.61019 cm−3, while the distance between the island structures was on average 1-2 µm. This distance is much smaller than the distance between the current-collecting contacts. Experiments have shown that the spectral sensitivity of the studied photocells with GexSi1−x structures expands toward the infrared region of the solar spectrum. This is explained by the absorption of photons by microheterovariband GexSi1−x −Si structures.
Keywords: Photovoltaics; Efficiency, silicon; Renewable energy; Solar cells; Heterovarigated band structure; Diffusion; Germanium
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