Single-crystalline Silicon on Quartz (SOQ) Wafer by Ultra-low Temperature (100 °C) Wafer Bonding and Thinning Approaches

Chih-Hsiang Chang; Cheng-Jien Peng; Guan-Liang Lu; Tzer-Sheng Lin

doi:10.6180/jase.2005.8.3.05

Single-crystalline Silicon on Quartz (SOQ) Wafer by Ultra-low Temperature (100 °C) Wafer Bonding and Thinning Approaches

Chih-Hsiang Chang This email address is being protected from spambots. You need JavaScript enabled to view it.¹, Cheng-Jien Peng¹, Guan-Liang Lu¹ and Tzer-Sheng Lin¹

¹Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, R.O.C.

Received: January 18, 2005
Accepted: March 28, 2005
Publication Date: September 1, 2005

Download Citation: ||https://doi.org/10.6180/jase.2005.8.3.05

ABSTRACT

Single-crystalline silicon films have been prepared on synthetic quartz (fused quartz or quartz glass) substrates by ultra-low temperature wafer bonding and thinning approaches. The wafer surfaces treated only by RCA1 process showed a relative low initial bonding energy of 0.17 J/m² . Though the bonding strength can be raised to 14 J/m² after 350 ºC annealing for 4 h, the severe warpage of bonded wafer led to the poor total thickness variation (TTV) of SOQ wafers (TTV > 10 m) after thinning. However, if the wafer surfaces treated with RCA1 process, and followed by O₂ plasma treatment for 15 sec, the initial bonding energy can be raised to 0.83 J/m² . After the bonded wafer annealed at 100 ºC for 16 hrs, the bonding strength increased rapidly to 13.3 J/m² with still a low warpage of 2.5 μm. The SOQ wafers fabricated by the ultra-low temperature bonding, lapping and polishing showed relative good TTV of less than 4 μm.

Keywords: Wafer Bonding, Plasma Treatment, Silicon on Quartz

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